Germanium is one of the most promising candidates for the channel material of future CMOS devices,because of its high ca......

Germanium has been attracting a lot of interest due to its much higher electron and hole mobility than those in Si,and t......

利用傅里叶变换拉曼散射技术研究了CdTe表面的拉曼散射信号与激发光功率的关系,并对实验结果进行了分析和定性解释。......

介绍了利用KrF准分子脉冲激光对氢化非晶碳化硅(a-SiC∶H)薄膜进行激光退火以实现薄膜的结晶化。利用等离子增强化学气相沉积(PECV......

A1GaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and......

　　Fabrication of monolithically integrated photonic devices requires quantum well (QW) or quantum dot (QD) wafers with......

利用连续Ar⁺激光对淀积在砷化镓上的Si/Pd进行退火,形成Si/Pd₂Si/GaAs(6.9&#215;10¹⁷cm<sup>-3......